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Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 10 μA
V DS = 60 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
T J = 125 o C
60
1
500
10
-10
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 1)
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS = V GS , I D = 250 μA
V GS = 10 V, I D = 500 mA
1
2.1
1.2
2.5
2
V
?
V GS = 4.5 V, I D = 75 mA
T J = 125 o C
2
1.8
3.5
3
V DS(ON)
Drain-Source On-Voltage
V GS = 10 V, I D = 500 mA
0.6
1
V
V GS = 4.5 V, I D = 75 mA
0.14
0.225
I D(ON)
On-State Drain Current
V GS = 10 V, V DS > 2 V DS(on)
2000
2700
mA
V GS = 4.5 V, V DS > 2 V DS(on)
400
600
g FS
Forward Transconductance
V DS > 2 V DS(on) , I D = 200 mA
100
320
mS
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
20
11
4
50
25
5
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 1)
t on
t off
Turn-On Time
Turn-Off Time
V DD = 30 V, I D = 500 m A,
V GS = 10 V, R GEN = 25 ?
10
10
ns
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
400
2000
mA
mA
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 400 mA (Note 1)
0.88
1.2
V
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
BS270.SAM
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